No. |
Part Name |
Description |
Manufacturer |
1 |
1N6384 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
2 |
1N6384 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
3 |
1N6384 |
Transient Voltage Suppressor |
Microsemi |
4 |
1N6384 |
Diode TVS Single Bi-Dir 12V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
5 |
2N6384 |
Leaded Power Transistor Darlington |
Central Semiconductor |
6 |
2N6384 |
Power Darlington NPN transistor |
FERRANTI |
7 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
8 |
2N6384 |
NPN Darlington Transistor |
Microsemi |
9 |
2N6384 |
POWER TRANSISTORS(10A,100W) |
MOSPEC Semiconductor |
10 |
2N6384 |
15A peak complementary silicon power darlington NPN transistor |
Motorola |
11 |
2N6384 |
Trans Darlington NPN 60V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
12 |
2N6384 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
13 |
AON6384 |
Single LV MOSFETs (12V - 30V) |
Alpha & Omega Semiconductor |
14 |
JAN2N6384 |
NPN Darlington Transistor |
Microsemi |
15 |
JANTX2N6384 |
NPN Darlington Transistor |
Microsemi |
16 |
JANTXV2N6384 |
NPN Darlington Transistor |
Microsemi |
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