No. |
Part Name |
Description |
Manufacturer |
1 |
1N6387 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
2 |
1N6387 |
Transient Voltage Suppressor |
Microsemi |
3 |
1N6387 |
Diode TVS Single Bi-Dir 22V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
4 |
2N6387 |
DARLINGTON SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
5 |
2N6387 |
Leaded Power Transistor Darlington |
Central Semiconductor |
6 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
7 |
2N6387 |
POWER TRANSISTORS(65W) |
MOSPEC Semiconductor |
8 |
2N6387 |
Plastic 65W medium-power NPN silicon transistor |
Motorola |
9 |
2N6387 |
DARLINGTON NPN SILICON POWER TRANSISTORS |
ON Semiconductor |
10 |
2N6387 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
11 |
2N6387 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
12 |
2N6387-D |
Plastic Medium-Power Silicon Transistors |
ON Semiconductor |
13 |
AN6387 |
VCR CYLINDER DIREET MOTOR DRIVE CIRCUIT |
Panasonic |
14 |
EN6387 |
Bipolar Transistor, -15V, -1.5A, Low VCE(sat), PNP Single MCPH6 |
ON Semiconductor |
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