No. |
Part Name |
Description |
Manufacturer |
1 |
1N6388 |
36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
2 |
1N6388 |
Transient Voltage Suppressor |
Microsemi |
3 |
1N6388 |
Diode TVS Single Bi-Dir 36V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
4 |
2N6388 |
DARLINGTON SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
5 |
2N6388 |
Leaded Power Transistor Darlington |
Central Semiconductor |
6 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
7 |
2N6388 |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
8 |
2N6388 |
POWER TRANSISTORS(65W) |
MOSPEC Semiconductor |
9 |
2N6388 |
Plastic 65W medium-power NPN silicon transistor |
Motorola |
10 |
2N6388 |
Power 8A 80V Darlington NPN |
ON Semiconductor |
11 |
2N6388 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
12 |
2N6388 |
SILICON NPN POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
13 |
2N6388 |
SILICON NPN POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
14 |
2N6388 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
15 |
2N6388 |
SILICON NPN POWER DARLINGTON TRANSISTOR |
ST Microelectronics |
16 |
H2N6388 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
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