| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6515 |
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
| 2 |
1N6515LL |
3000 V rectifier 1.5-3.5 A forward current, 70 ns recovery time |
Voltage Multipliers |
| 3 |
1N6515U |
2,000 V - 5,000 V Rectifiers |
Voltage Multipliers |
| 4 |
1N6515US |
Diode Switching 3KV 2.5A |
New Jersey Semiconductor |
| 5 |
2N6515 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 6 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
| 7 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 8 |
2N6515 |
Ic=500mA, Vce=10V transistor |
MCC |
| 9 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 10 |
2N6515 |
High voltage NPN transistor |
Motorola |
| 11 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
| 12 |
2N6515 |
NPN Epitaxial Silicon High Voltage Transistor |
Samsung Electronic |
| 13 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 14 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
| 15 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
| | | |
