| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6518 |
Diode Switching 5KV 2A 2-Pin |
New Jersey Semiconductor |
| 2 |
2N6518 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 3 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 4 |
2N6518 |
High voltage PNP transistor |
Motorola |
| 5 |
2N6518 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 6 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 7 |
2N6518BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 8 |
2N6518TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| | | |
