No. |
Part Name |
Description |
Manufacturer |
1 |
1N661 |
200 V, 500 mW general purpose diode |
BKC International Electronics |
2 |
1N661 |
General purpose low diode. Working inverse voltage 200V. |
Fairchild Semiconductor |
3 |
1N661 |
Signal Diode |
Motorola |
4 |
1N661 |
DIODE 0.5A 2DIE |
New Jersey Semiconductor |
5 |
1N661 |
Silicon Switching Diode |
Texas Instruments |
6 |
1N661 |
Silicon Diode Case Style DO-7, Available in mil. version |
Transitron Electronic |
7 |
1N6612 |
400 V rectifier 1.5 A forward current, 70 ns recovery time |
Voltage Multipliers |
8 |
1N6613 |
600 V rectifier 1.5 A forward current, 70 ns recovery time |
Voltage Multipliers |
9 |
1N6614 |
800 V rectifier 1.5 A forward current, 70 ns recovery time |
Voltage Multipliers |
10 |
1N6615 |
1000 V rectifier 1.5 A forward current, 70 ns recovery time |
Voltage Multipliers |
11 |
1N6616 |
3.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
12 |
1N6617 |
3.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
13 |
1N6618 |
3.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
14 |
1N6619 |
3.0 A Forward Current 70 ns Recovery Time |
Voltage Multipliers |
15 |
1N661A |
Signal Diode |
Motorola |
16 |
1N661A |
DIODE 0.5A 2DIE |
New Jersey Semiconductor |
17 |
2N661 |
Germanium PNP Transistor |
Motorola |
18 |
2N661 |
Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
19 |
2N6618 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
20 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
21 |
AN661 |
CALCULATION OF THE LOSSES IN A CHOPPER TOPOLOGY |
SGS Thomson Microelectronics |
22 |
AN6610 |
Motor Control Circuit |
Panasonic |
23 |
AN6612 |
Motor Control Circuits |
Panasonic |
24 |
AN6612S |
Motor Control Circuits |
Panasonic |
25 |
EN6611 |
Bipolar Transistor, (-)50V, (-)1A, Low VCE(sat), (PNP)NPN Single MCPH6 |
ON Semiconductor |
26 |
EN6619 |
P-Channel Small Signal MOSFET -50V, -0.07A, 23 Ohm, Single CP |
ON Semiconductor |
27 |
ENN6612B |
Electret Condenser Microphone Applications |
SANYO |
28 |
MAN6610 |
0.560-INCH SEVEN SEGMENT DISPLAYS |
Fairchild Semiconductor |
29 |
MAN6610 |
0.560-INCH SEVEN SEGMENT DISPLAYS |
QT Optoelectronics |
30 |
MAN6610E |
High Efficiency Red 0.56 inch (14.2 mm) Two Digit Frame Display, commond anode |
Fairchild Semiconductor |
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