| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N666 |
Zener Diode |
Motorola |
| 2 |
1N6660 |
Schottky Rectifier |
Microsemi |
| 3 |
1N6660R |
Schottky Rectifier |
Microsemi |
| 4 |
1N6661 |
Signal or Computer Diode |
Microsemi |
| 5 |
1N6661US |
Signal or Computer Diode |
Microsemi |
| 6 |
1N6662 |
Signal or Computer Diode |
Microsemi |
| 7 |
1N6662US |
Signal or Computer Diode |
Microsemi |
| 8 |
1N6663 |
Signal or Computer Diode |
Microsemi |
| 9 |
1N6663US |
Signal or Computer Diode |
Microsemi |
| 10 |
22JGQ045 |
30A 45V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N6660CAT1 |
International Rectifier |
| 11 |
22JGQ045SCV |
30A 45V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N6660CAT1 |
International Rectifier |
| 12 |
22JGQ045SCX |
30A 45V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N6660CAT1 |
International Rectifier |
| 13 |
2N6660 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
| 14 |
2N6660 |
Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD |
New Jersey Semiconductor |
| 15 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 16 |
2N6660 |
N-Channel 60-V (D-S) Single and Quad MOSFETs |
Vishay |
| 17 |
2N6661 |
N-Channel Enhancement Mode MOSFETs |
Microchip |
| 18 |
2N6661 |
TMOS SWITCHING FET TRANSISTORS |
Motorola |
| 19 |
2N6661 |
Trans MOSFET N-CH 90V 0.35A 3-Pin TO-39 |
New Jersey Semiconductor |
| 20 |
2N6661 |
N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR |
SemeLAB |
| 21 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 22 |
2N6661 |
N-Channel 80-V and 90-V (D-S) MOSFETS |
Vishay |
| 23 |
2N6666 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 24 |
2N6666 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 25 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 26 |
2N6666 |
POWER TRANSISTORS(65W) |
MOSPEC Semiconductor |
| 27 |
2N6667 |
PLASTIC MEDIUM-POWER SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 28 |
2N6667 |
Leaded Power Transistor Darlington |
Central Semiconductor |
| 29 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 30 |
2N6667 |
POWER TRANSISTORS(65W) |
MOSPEC Semiconductor |
| | | |
