| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6676 |
0.2 AND 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 2 |
1N6676 |
Schottky Rectifier |
Microsemi |
| 3 |
1N6676-1 |
Si Schottky Rectifier Diodes |
Microsemi |
| 4 |
1N6676-1E3 |
Si Schottky Rectifier Diodes |
Microsemi |
| 5 |
1N6676UR-1 |
Si Schottky Rectifier Diodes |
Microsemi |
| 6 |
2N6676 |
NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 7 |
2N6676 |
15 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
| 8 |
2N6676 |
NPN Transistor |
Microsemi |
| 9 |
2N6676 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
| 10 |
2N6676 |
NPN silicon power transistor. 15 A, 300 V, 175 W. |
Motorola |
| 11 |
2N6676 |
Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 12 |
2N6676 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
| 13 |
JAN2N6676 |
NPN Transistor |
Microsemi |
| 14 |
JANS2N6676 |
NPN Transistor |
Microsemi |
| 15 |
JANTX2N6676 |
NPN Transistor |
Microsemi |
| 16 |
JANTXV2N6676 |
NPN Transistor |
Microsemi |
| | | |
