| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N869 |
Rectifier Diode 100V |
Motorola |
| 2 |
2N869 |
PNP Transistor General Purpose |
Amelco Semiconductor |
| 3 |
2N869 |
PNP silicon transistor for high-frequency |
Motorola |
| 4 |
2N869 |
Silicon PNP Transistor |
Motorola |
| 5 |
2N869 |
PNP Switching Transistor |
National Semiconductor |
| 6 |
2N869 |
Trans GP BJT PNP 25V 0.1A 3-Pin TO-18 |
New Jersey Semiconductor |
| 7 |
2N869 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| 8 |
2N869 |
Transistor |
SGS-ATES |
| 9 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
| 10 |
2N869A |
Silicon PNP Transistor |
Motorola |
| 11 |
2N869A |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 12 |
2N869A |
PNP Switching Transistor |
National Semiconductor |
| 13 |
2N869A |
Trans GP BJT PNP 18V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 14 |
2N869A |
Transistor, high speed saturated switches |
SGS-ATES |
| 15 |
2N869A |
Transistor |
SGS-ATES |
| 16 |
AN869 |
TJ MAX LIMIT OF SCHOTTKY DIODE |
SGS Thomson Microelectronics |
| 17 |
DN8690 |
4-circuit Darlington Driver Array (High Breakdown Voltage : 60V, Large Drive Current : 1.5A) |
Panasonic |
| 18 |
DN8695 |
9-circuit Darlington Driver Array (High Breakdown Voltage : 50V, Large Drive Current : 1.5A) |
Panasonic |
| 19 |
EN8699 |
P-Channel Power MOSFET, -60V, -2.5A, 137mOhm, Dual VEC8 |
ON Semiconductor |
| 20 |
FDC37N869 |
5V and 3.3V Super I/O Controller with Infrared Support for Portable Applications |
Standard Microsystems |
| 21 |
FDC37N869TQFP |
5V and 3.3V Super I/O Controller with Infrared Support for Portable Applications |
SMSC Corporation |
| 22 |
SF_2N869 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package |
SemeLAB |
| | | |
