No. |
Part Name |
Description |
Manufacturer |
1 |
ADL5306 |
60 dB-range (100 nA-100 µA) Low-Cost Logarithmic Converter |
Analog Devices |
2 |
ADL5306-EVAL |
60 dB-range (100 nA-100 µA) Low-Cost Logarithmic Converter |
Analog Devices |
3 |
ADL5306ACP |
60 dB-range (100 nA-100 µA) Low-Cost Logarithmic Converter |
Analog Devices |
4 |
ADL5306ACP-R2 |
60 dB-range (100 nA-100 µA) Low-Cost Logarithmic Converter |
Analog Devices |
5 |
ADL5306ACP-REEL7 |
60 dB-range (100 nA-100 µA) Low-Cost Logarithmic Converter |
Analog Devices |
6 |
EBD21RD4ABNA-10 |
2GB Registered DDR SDRAM DIMM |
Elpida Memory |
7 |
INA-10386 |
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
8 |
INA-10386-BLK |
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
9 |
INA-10386-TR1 |
Low Noise, Cascadable Silicon Bipolar MMIC Amplifier |
Agilent (Hewlett-Packard) |
10 |
MH51208ANA-10H |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
11 |
MH51208ANA-10L |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
12 |
MH51208UNA-10 |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
13 |
MH51208UNA-10L |
Access time: 100 ns, 110 mA, CMOS 128 K x 8 static RAM module |
Mitsubishi Electric Corporation |
14 |
SNA-100 |
DC-10 GHz, cascadable GaAs MMIC amplifier. Cascadable 50 ohm gain block. |
Stanford Microdevices |
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