| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BYG20D |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 2 |
BYG20G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 3 |
BYG20J |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 4 |
BYG23M |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 5 |
HERA805G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 6 |
HERAF1001G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 7 |
HERAF1002G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 8 |
HERAF1003G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 9 |
HERAF1004G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 10 |
HERAF1005G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 11 |
HERAF1006G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 12 |
HERAF1007G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 13 |
HERAF1008G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 14 |
HS1AL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 15 |
HS1BL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 16 |
HS1DL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 17 |
HS1FL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 18 |
HS1GL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 19 |
HS1JL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 20 |
HS1KL |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 21 |
HS1ML |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 22 |
HS3AB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 23 |
HS3BB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 24 |
HS3DB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 25 |
HS3FB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 26 |
HS3GB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 27 |
HS3JB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 28 |
HS3KB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 29 |
HS3MB |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 30 |
IR21531 |
Half Bridge Driver, LO In Phase with RT, Programmable Oscillating Frequency, 0.6us Deadtime in a 8-pin DIP package and differenct phase |
International Rectifier |
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