| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S1920 |
Silicon Diffused Junction Diode used for TV Horizontal Deflection Damper |
Hitachi Semiconductor |
| 2 |
1S1921A |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -200V |
Hitachi Semiconductor |
| 3 |
1S1921B |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -400V |
Hitachi Semiconductor |
| 4 |
1S1921C |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -600V |
Hitachi Semiconductor |
| 5 |
1S1921D |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -800V |
Hitachi Semiconductor |
| 6 |
1S1921E |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1000V |
Hitachi Semiconductor |
| 7 |
1S1921F |
Silicon Diffused Junction Diode used for TV 15kHz Rectifier Horizontal Clip - VR(peak) -1200V |
Hitachi Semiconductor |
| 8 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 9 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 10 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 11 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 12 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 13 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 14 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 15 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 16 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 17 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 18 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 19 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 20 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 21 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 22 |
1S85 |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 23 |
1S85H |
Silicon Diffused Junction Diode, Varicap - Voltage Variable Capacitance |
Hitachi Semiconductor |
| 24 |
2N5265 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 25 |
2N5266 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 26 |
2N5267 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 27 |
2N5268 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 28 |
2N5269 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 29 |
2N5270 |
P-Channel junction depletion mode (Type A) field-effect transistor |
Motorola |
| 30 |
2SJ90 |
Silicon monolithic P channel junction dual pair transistors |
TOSHIBA |
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