No. |
Part Name |
Description |
Manufacturer |
1 |
AND6 |
6-input AND gate with 1x drive strength |
Austria Mikro Systems |
2 |
AOND62930 |
Dual MV MOSFETs (40V - 400V) |
Alpha & Omega Semiconductor |
3 |
ELJND68NJF |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
4 |
ELJND68NKF |
Chip Inductors - High Freq. Use (Non Magnetic Core) |
Panasonic |
5 |
M68AW128ML55ND6 |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
6 |
M68AW128ML55ND6E |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
7 |
M68AW128ML55ND6F |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
8 |
M68AW128ML55ND6T |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
9 |
M68AW128ML70ND6 |
2 MBIT (128K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
10 |
M68AW128ML70ND6E |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
11 |
M68AW128ML70ND6F |
2 Mbit (128K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
12 |
M68AW128ML70ND6T |
2 MBIT (128K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
13 |
M68AW256DL70ND6 |
4 MBIT (256K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
14 |
M68AW256DL70ND6T |
4 MBIT (256K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
15 |
M68AW256ML55ND6T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
16 |
M68AW256ML70ND6 |
4 MBIT (256K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
17 |
M68AW256ML70ND6E |
4 MBIT (256K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
18 |
M68AW256ML70ND6T |
4 MBIT (256K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
19 |
M68AW256MN55ND6 |
4 MBIT (256K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
20 |
M68AW256MN55ND6T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
21 |
M68AW256MN70ND6T |
4 Mbit (256K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
22 |
M68AW512ML55ND6T |
8 Mbit (512K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
23 |
M68AW512ML70ND6 |
8 MBIT (512K X16) 3.0V ASYNCHRONOUS SRAM |
ST Microelectronics |
24 |
M68AW512ML70ND6T |
8 Mbit (512K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
25 |
M68AW512MN55ND6T |
8 Mbit (512K x16) 3.0V Asynchronous SRAM |
ST Microelectronics |
26 |
ND6261-3F |
100 V, 10 mA, microwave silicon PIN diode |
NEC |
27 |
ND6271-5E |
100 V, 10 mA, microwave silicon PIN diode |
NEC |
28 |
ND6281-3A |
100 V, X-band silicon PIN diode |
NEC |
29 |
ND6281-3D |
100 V, X-band silicon PIN diode |
NEC |
30 |
ND6281-3G |
100 V, 10 mA, microwave silicon PIN diode |
NEC |
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