| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AB-132 |
SOLDER PAD RECOMMENDATIONS FOR SURFACE-MOUNT DEVICES |
Burr Brown |
| 2 |
AN-902 |
Twisted Pair FDDI Magnetics Overview and Recommendations |
National Semiconductor |
| 3 |
AN1235 |
FLIP-CHIP CSP: PACKAGE DESCRIPTION AND RECOMMENDATIONS FOR USE |
SGS Thomson Microelectronics |
| 4 |
AN1547 |
FLIP CHIP 170MICRONSM RECOMMENDATIONS FOR AUDIO POWER AMPLIFIERS |
SGS Thomson Microelectronics |
| 5 |
AN1553 |
FLIP CHIP 300MICRONSM RECOMMENDATIONS FOR AUDIO POWER AMPLIFIER |
SGS Thomson Microelectronics |
| 6 |
AN899 |
MCUS - SOLDERING RECOMMENDATIONS AND PACKAGING INFORMATION |
SGS Thomson Microelectronics |
| 7 |
GA3216 |
Foundation GA3216 Pre-configured DSP System for Hearing Aids |
ON Semiconductor |
| 8 |
MOUNTING |
Recommendation for mounting flange RF power transistors |
Philips |
| 9 |
RECOMMENDATIONS |
RF Silicon bipolar transistors general operational recommendations |
Philips |
| 10 |
RECOMMENDATIONS |
RF Silicon bipolar transistors general operational recommendations |
Philips |
| 11 |
V.23 |
Recommendations for V.23 1200/75bps Full-Duplex Call Set-Up |
CONSUMER MICROCIRCUITS LIMITED |
| 12 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 13 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 14 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |
