| No. |
Part Name |
Description |
Manufacturer |
| 1 |
NDD01N60 |
Power MOSFET 600V 8.5 Ohm Single N-Channel |
ON Semiconductor |
| 2 |
NDD02N40 |
Power MOSFET 400V 5.5 Ohm Single N-Channel |
ON Semiconductor |
| 3 |
NDD03N50Z |
Power MOSFET 500V 3.3 Ohm Single N-Channel |
ON Semiconductor |
| 4 |
NDD03N80Z |
Power MOSFET 800V 4.5 Ohm Single N-Channel |
ON Semiconductor |
| 5 |
NDD04N50Z |
Power MOSFET 500V 2.7 Ohm Single N-Channel |
ON Semiconductor |
| 6 |
NDD60N550U1 |
N-Channel Power MOSFET |
ON Semiconductor |
| 7 |
NDD60N745U1 |
N-Channel Power MOSFET |
ON Semiconductor |
| 8 |
NDD60N900U1 |
N-Channel Power MOSFET |
ON Semiconductor |
| 9 |
RN1970FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit andDriver Circuit Applications. |
TOSHIBA |
| 10 |
RN1971FE |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit andDriver Circuit Applications. |
TOSHIBA |
| 11 |
RN1973 |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit andDriver Circuit Applications. |
TOSHIBA |
| | | |
