| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
| 2 |
1011-055 |
High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
SGS Thomson Microelectronics |
| 3 |
1011-060 |
High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
SGS Thomson Microelectronics |
| 4 |
1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
| 5 |
10134 |
Dual Multiplexer - Latch (with independent selects) |
Signetics |
| 6 |
10134 |
Dual Multiplexer - Latch (with independent selects) |
Signetics |
| 7 |
10134F |
Dual Multiplexer - Latch (with independent selects) |
Signetics |
| 8 |
10134F |
Dual Multiplexer - Latch (with independent selects) |
Signetics |
| 9 |
10707A |
10707A Beam Bender |
Agilent (Hewlett-Packard) |
| 10 |
10726A |
10726A Beam Bender |
Agilent (Hewlett-Packard) |
| 11 |
13PD150-TO |
The 13PD150-TO, an InGaAs photodiode with a 150µm-diameter photosensitive region and packaged in a TO-46 header, is intended ... |
Anadigics Inc |
| 12 |
1502B |
GOLD BONDED DIODES |
BKC International Electronics |
| 13 |
152D |
Solid Tantalum Capacitors, Solid Electrolyte Tantalex, Extended Range, Hermetic Seal, Axial Leaded |
Vishay |
| 14 |
15P1 |
Gold bounded germanium signal diode - general purpose |
SESCOSEM |
| 15 |
16LH |
- Vishay - Motion transducers, Integrated Cylinders |
Vishay |
| 16 |
16P1 |
Gold bounded germanium signal diode - general purpose |
SESCOSEM |
| 17 |
194D |
Solid Tantalum Chip Capacitors, Conformal, High Reliability, MIDGET® Solid-Electrolyte, New Extended Range, Minimum Size |
Vishay |
| 18 |
19P1 |
Gold bounded germanium signal diode - switching |
SESCOSEM |
| 19 |
1AS027 |
Silicon rectifier with avalanche character 1.5A 800V, approved under CV7645 for MIL applications |
Texas Instruments |
| 20 |
1AS029 |
Silicon rectifier with avalanche character 1.5A 1000V, approved under CV7645 for MIL applications |
Texas Instruments |
| 21 |
1N100 |
100 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 22 |
1N100 |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
| 23 |
1N100A |
100 V, 250 mA, gold bonded germanium diode |
BKC International Electronics |
| 24 |
1N102 |
125 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 25 |
1N103 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 26 |
1N104 |
12 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 27 |
1N107 |
10 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 28 |
1N108 |
50 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 29 |
1N111 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 30 |
1N112 |
70 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
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