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Datasheets for NE1

Datasheets found :: 114
Page: | 1 | 2 | 3 | 4 |
No. Part Name Description Manufacturer
1 1NE11 Rectifier diode TOSHIBA
2 1NE11 Silicon alloy-diffused junction avalanche rectifier 1A 1000V TOSHIBA
3 7MBR10NE120 IGBT(1200V/10A) Fuji Electric
4 7MBR15NE120 IGBT MODULE(1200V/15A/PIM) Fuji Electric
5 7MBR25NE120 IGBT module COLLMER SEMICONDUCTOR INC
6 7MBR25NE120 IGBT (1200V/25A/PIM) Fuji Electric
7 DSC1103NE1-125.0000 Clock and Timing - Oscillators Microchip
8 DSC1122NE1-025.0000 Clock and Timing - Oscillators Microchip
9 DSC1122NE1-025.0000T Clock and Timing - Oscillators Microchip
10 DSC1122NE1-133.3330 Clock and Timing - Oscillators Microchip
11 DSC1122NE1-133.3330T Clock and Timing - Oscillators Microchip
12 DSC1122NE1-150.0000 Clock and Timing - Oscillators Microchip
13 DSC1122NE1-150.0000T Clock and Timing - Oscillators Microchip
14 DSC1124NE1-100.0000 Clock and Timing - Oscillators Microchip
15 DSC1124NE1-100.0000T Clock and Timing - Oscillators Microchip
16 FM27C010NE120 1/048/576-Bit 128K x 8 High Performance CMOS EPROM Fairchild Semiconductor
17 FM27C010NE150 1/048/576-Bit 128K x 8 High Performance CMOS EPROM Fairchild Semiconductor
18 FM27C040NE120 4/194/304-Bit 512K x 8 High Performance CMOS EPROM Fairchild Semiconductor
19 FM27C040NE150 4/194/304-Bit 512K x 8 High Performance CMOS EPROM Fairchild Semiconductor
20 FM27C256NE120 262/144-Bit (32K x 8) High Performance CMOS EPROM Fairchild Semiconductor
21 FM27C256NE150 262/144-Bit (32K x 8) High Performance CMOS EPROM Fairchild Semiconductor
22 FM27C512NE120 524/288-Bit (64K x 8) High Performance CMOS EPROM Fairchild Semiconductor
23 FM27C512NE150 524/288-Bit (64K x 8) High Performance CMOS EPROM Fairchild Semiconductor
24 M39832-B12WNE1T Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory ST Microelectronics
25 M39832-B15WNE1T Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory ST Microelectronics
26 M39832-T12WNE1T Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory ST Microelectronics
27 M39832-T15WNE1T Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory ST Microelectronics
28 NE1069L-4B 1.6-2.3 GHz, 4 W, L,S-band power GaAs MESFET NEC
29 NE13700 80 GHz, 3 V, low noise Ku-band GaAs MESFET NEC
30 NE13783 80 GHz, 3 V, low noise Ku-band GaAs MESFET NEC


Datasheets found :: 114
Page: | 1 | 2 | 3 | 4 |



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