No. |
Part Name |
Description |
Manufacturer |
1 |
1NE11 |
Rectifier diode |
TOSHIBA |
2 |
1NE11 |
Silicon alloy-diffused junction avalanche rectifier 1A 1000V |
TOSHIBA |
3 |
7MBR10NE120 |
IGBT(1200V/10A) |
Fuji Electric |
4 |
7MBR15NE120 |
IGBT MODULE(1200V/15A/PIM) |
Fuji Electric |
5 |
7MBR25NE120 |
IGBT module |
COLLMER SEMICONDUCTOR INC |
6 |
7MBR25NE120 |
IGBT (1200V/25A/PIM) |
Fuji Electric |
7 |
DSC1103NE1-125.0000 |
Clock and Timing - Oscillators |
Microchip |
8 |
DSC1122NE1-025.0000 |
Clock and Timing - Oscillators |
Microchip |
9 |
DSC1122NE1-025.0000T |
Clock and Timing - Oscillators |
Microchip |
10 |
DSC1122NE1-133.3330 |
Clock and Timing - Oscillators |
Microchip |
11 |
DSC1122NE1-133.3330T |
Clock and Timing - Oscillators |
Microchip |
12 |
DSC1122NE1-150.0000 |
Clock and Timing - Oscillators |
Microchip |
13 |
DSC1122NE1-150.0000T |
Clock and Timing - Oscillators |
Microchip |
14 |
DSC1124NE1-100.0000 |
Clock and Timing - Oscillators |
Microchip |
15 |
DSC1124NE1-100.0000T |
Clock and Timing - Oscillators |
Microchip |
16 |
FM27C010NE120 |
1/048/576-Bit 128K x 8 High Performance CMOS EPROM |
Fairchild Semiconductor |
17 |
FM27C010NE150 |
1/048/576-Bit 128K x 8 High Performance CMOS EPROM |
Fairchild Semiconductor |
18 |
FM27C040NE120 |
4/194/304-Bit 512K x 8 High Performance CMOS EPROM |
Fairchild Semiconductor |
19 |
FM27C040NE150 |
4/194/304-Bit 512K x 8 High Performance CMOS EPROM |
Fairchild Semiconductor |
20 |
FM27C256NE120 |
262/144-Bit (32K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
21 |
FM27C256NE150 |
262/144-Bit (32K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
22 |
FM27C512NE120 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
23 |
FM27C512NE150 |
524/288-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
24 |
M39832-B12WNE1T |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
25 |
M39832-B15WNE1T |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
26 |
M39832-T12WNE1T |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
27 |
M39832-T15WNE1T |
Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory |
ST Microelectronics |
28 |
NE1069L-4B |
1.6-2.3 GHz, 4 W, L,S-band power GaAs MESFET |
NEC |
29 |
NE13700 |
80 GHz, 3 V, low noise Ku-band GaAs MESFET |
NEC |
30 |
NE13783 |
80 GHz, 3 V, low noise Ku-band GaAs MESFET |
NEC |
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