| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FM27C512NE55L |
512K-Bit (64K x 8) High Performance CMOS EPROM |
Fairchild Semiconductor |
| 2 |
GLC555 |
CMOS General purpose timer, exact equivalent in most cases for SE/NE555 |
GoldStar |
| 3 |
GLC556 |
CMOS General purpose timer, exact equivalent in most cases for SE/NE556 |
GoldStar |
| 4 |
NE550 |
Precision voltage regulator |
Signetics |
| 5 |
NE5500179A |
SILICON POWER MOS FET |
NEC |
| 6 |
NE5500179A-T1 |
SILICON POWER MOS FET |
NEC |
| 7 |
NE550A |
Precision voltage regulator |
Signetics |
| 8 |
NE550L |
Precision voltage regulator |
Signetics |
| 9 |
NE5510179A-T1 |
3.5 V operation silicon RF power MOSFET for 1.9 GHz transmission amplifiers. |
NEC |
| 10 |
NE5510279A-T1 |
3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers. |
NEC |
| 11 |
NE5511279A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 12 |
NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 13 |
NE5511279A-T1A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 14 |
NE5512 |
Dual high-performance operational amplifier |
Philips |
| 15 |
NE5512D |
Dual high-performance operational amplifier |
Philips |
| 16 |
NE5512N |
Dual high-performance operational amplifier |
Philips |
| 17 |
NE5514 |
Quad high-performance operational amplifier |
Philips |
| 18 |
NE5514D |
Quad high-performance operational amplifier |
Philips |
| 19 |
NE5514N |
Quad high-performance operational amplifier |
Philips |
| 20 |
NE5514NB |
Quad high-performance operational amplifier |
Philips |
| 21 |
NE5517 |
Dual Operational Transconductance Amplifier |
ON Semiconductor |
| 22 |
NE5517 |
Dual operational transconductance amplifier |
Philips |
| 23 |
NE5517A |
Dual operational transconductance amplifier |
Philips |
| 24 |
NE5517AN |
Dual operational transconductance amplifier |
Philips |
| 25 |
NE5517D |
Dual operational transconductance amplifier |
Philips |
| 26 |
NE5517N |
Dual operational transconductance amplifier |
Philips |
| 27 |
NE5520279A |
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET |
NEC |
| 28 |
NE5520279A-T1 |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
NEC |
| 29 |
NE5520379A-T1A |
NEC's 3.2 V, 3 W, L/S band medium power silicon LD-MOSFET. |
NEC |
| 30 |
NE5521 |
LVDT signal conditioner |
Philips |
| | | |
