| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0002 |
HIGH SPEED, BUFFER AMPLIFIER AMP |
M.S. Kennedy Corp. |
| 2 |
0032 |
HIGH SPEED, FET INPUT DIFFERENTIAL OP-AMP |
M.S. Kennedy Corp. |
| 3 |
0033 |
FET INPUT HIGH SPEED VOLTAGE FOLLOWER/BUFFER AMPLIFIER |
M.S. Kennedy Corp. |
| 4 |
1002M |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 5 |
1002MP |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 6 |
1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
| 7 |
1011-055 |
High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
SGS Thomson Microelectronics |
| 8 |
1011-060 |
High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
SGS Thomson Microelectronics |
| 9 |
1011-225 |
High power Class C transistor designed for L-Band Avionics applications |
SGS Thomson Microelectronics |
| 10 |
1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
| 11 |
12BH7-A |
The 12BH7-A is a miniature medium-mu twin troide designed primarily for use as a vertical-deflection amplifier in television receivers |
General Semiconductor |
| 12 |
12CWQ10G |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 13 |
12CWQ10GPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 14 |
12CWQ10GTR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 15 |
12CWQ10GTRL |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 16 |
12CWQ10GTRLPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 17 |
12CWQ10GTRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 18 |
12CWQ10GTRR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 19 |
12CWQ10GTRRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 20 |
13PD100-ST |
The 13PD75-ST, -SMA, -SC, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned ... |
Anadigics Inc |
| 21 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 22 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 23 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 24 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 25 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 26 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 27 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 28 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 29 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 30 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| | | |
