No. |
Part Name |
Description |
Manufacturer |
1 |
01BZA8 |
DIODES (DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
2 |
01BZA8.2 |
Diodes for Protecting Against ESD |
TOSHIBA |
3 |
01ZA8 |
DIODES( DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
4 |
01ZA8.2 |
Diodes for Protecting Against ESD |
TOSHIBA |
5 |
01ZAB8.2 |
DIODES( DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
6 |
1N4001 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
7 |
1N4001G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
8 |
1N4002 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
9 |
1N4002G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
10 |
1N4003 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
11 |
1N4003G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
12 |
1N4004 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
13 |
1N4004G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
14 |
1N4005 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
15 |
1N4005G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
16 |
1N4006 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
17 |
1N4006G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
18 |
1N4007 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
19 |
1N4007G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
20 |
1N4148 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
21 |
1N4149 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
22 |
1N4152 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
23 |
1N4153 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
24 |
1N4446 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
25 |
1N4447 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
26 |
1N4448 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
27 |
1N4449 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
28 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
29 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
30 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
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