DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for NKS

Datasheets found :: 3704
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec Samsung Electronic
2 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
3 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
4 236 Board Level Power Semiconductor Heat Sinks Wakefield Thermal Solutions
5 42S16400A 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
6 42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
7 50S116T 512K x 2 Banks x 16 BITS SDRAM Ceramate
8 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
9 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
10 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
11 54S416T 1M x 4 Banks x 16 BITS SDRAM Ceramate
12 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
13 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
14 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
15 A43E26161 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM AMIC Technology
16 A43E26161G-95 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM AMIC Technology
17 A43E26161G-95F 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM AMIC Technology
18 A43E26161G-95U 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM AMIC Technology
19 A43E26161G-95UF 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM AMIC Technology
20 A43E26161V-95 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM AMIC Technology
21 A43E26161V-95F 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM AMIC Technology
22 A43E26161V-95U 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM AMIC Technology
23 A43E26161V-95UF 1M X 16 BIT X 4 BANKS LOW POWER SYNCHRONOUS DRAM AMIC Technology
24 A43L0616A 512K X 16 Bit X 2 Banks Synchronous DRAM AMIC Technology
25 A43L0616AV 512K X 16 Bit X 2 Banks Synchronous DRAM AMIC Technology
26 A43L0616AV-5 512K X 16 Bit X 2 Banks Synchronous DRAM AMIC Technology
27 A43L0616AV-5.5 5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM AMIC Technology
28 A43L0616AV-55 512K X 16 Bit X 2 Banks Synchronous DRAM AMIC Technology
29 A43L0616AV-6 512K X 16 Bit X 2 Banks Synchronous DRAM AMIC Technology
30 A43L0616AV-7 512K X 16 Bit X 2 Banks Synchronous DRAM AMIC Technology


Datasheets found :: 3704
Page: | 1 | 2 | 3 | 4 | 5 |



© 2024 - www Datasheet Catalog com