| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 2 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 3 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 4 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 5 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 6 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 7 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 8 |
2N1613 |
NPN medium power transistor |
Philips |
| 9 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 10 |
2N1711 |
NPN medium power transistor |
Philips |
| 11 |
2N1714 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
| 12 |
2N1715 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
| 13 |
2N1716 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
| 14 |
2N1717 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
| 15 |
2N1718 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
| 16 |
2N1719 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
| 17 |
2N1720 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
| 18 |
2N1721 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
| 19 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 20 |
2N1893 |
NPN medium power transistor |
Philips |
| 21 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 22 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 23 |
2N2218 |
Silicon NPN medium power transistor |
ICCE |
| 24 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 25 |
2N2218A |
Silicon NPN medium power transistor |
ICCE |
| 26 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 27 |
2N2219 |
Silicon NPN medium power transistor |
ICCE |
| 28 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 29 |
2N2219A |
Silicon NPN medium power transistor |
ICCE |
| 30 |
2N2221 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| | | |
