No. |
Part Name |
Description |
Manufacturer |
1 |
12S |
1/4 in [6.35mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Special Configurations Available, Military Quality at Affordable Prices |
Vishay |
2 |
14S |
1/4 in [6.35mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Special Configurations Available, Military Quality at Affordable Prices |
Vishay |
3 |
15S |
1/4 in [6.35mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Special Configurations Available, Military Quality at Affordable Prices |
Vishay |
4 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
5 |
17S |
1/4 in [6.35mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Special Configurations Available, Military Quality at Affordable Prices |
Vishay |
6 |
18S |
1/4 in [6.35mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Special Configurations Available, Military Quality at Affordable Prices |
Vishay |
7 |
1N4001A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
8 |
1N4002A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
9 |
1N4003A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
10 |
1N4004A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
11 |
1N4005A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
12 |
1N4006A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
13 |
1N4007A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
14 |
2023-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
15 |
2023-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
16 |
2023-6 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
17 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
18 |
2327-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
19 |
2327-5 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
20 |
232B |
Max voltage:40V; 200mA; industrial computer data line protector. For RS-232 transmission lines, catagory 3 systems, control & monitoring systems, analog signal transmissions and telemetry outstations |
Protek Devices |
21 |
232E |
Max voltage:40V; 200mA; industrial computer data line protector. For RS-232 transmission lines, catagory 3 systems, control & monitoring systems, analog signal transmissions and telemetry outstations |
Protek Devices |
22 |
2N2904 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
23 |
2N2904A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
24 |
2N2905 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
25 |
2N2905A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
26 |
2N2906 |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
27 |
2N2906A |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
28 |
2N2907 |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
29 |
2N2907A |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
30 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
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