No. |
Part Name |
Description |
Manufacturer |
1 |
GT15J321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
2 |
GT20J321 |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
3 |
GT30J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
4 |
GT30J324 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
5 |
GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
6 |
GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications |
TOSHIBA |
7 |
KGL4217 |
10-Gbps GaAs Optical Communications Family |
OKI electronic components |
8 |
KGL4217 |
10-Gbps GaAs Optical Communications Family |
OKI electronic eomponets |
9 |
KGL4221 |
10-Gbps GaAs Optical Communications Family |
OKI electronic components |
10 |
KGL4221 |
10-Gbps GaAs Optical Communications Family |
OKI electronic eomponets |
11 |
KGL4222 |
10-Gbps GaAs Optical Communications Family |
OKI electronic components |
12 |
KGL4222 |
10-Gbps GaAs Optical Communications Family |
OKI electronic eomponets |
13 |
SDW80S600 |
65ns Fast Recovery Diode, 600V Vrrm, 80A If, 1.5V Peak Forward Voltage |
SemiWell Semiconductor |
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