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Datasheets for NSI

Datasheets found :: 160725
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 0104-100 100 W, 28 V, 100-400 MHz, balanced transistor Acrian
2 0104-100 100 W, 28 V, 100-400 MHz common emitter transistor GHz Technology
3 0104-100-2 100 W, 28 V, 100-400 MHz, balanced transistor Acrian
4 0105-100 100 W, 28 V, 100-500 MHz, UHF balanced transistor Acrian
5 0105-100 100 W, 28 V, 100-500 MHz common emitter transistor GHz Technology
6 0105-100-2 100 W, 28 V, 100-500 MHz, UHF balanced transistor Acrian
7 0105-100-3 100 W, 28 V, 100-500 MHz, UHF balanced transistor Acrian
8 0105-12 12 W, 28 V, 100-500 MHz, UHF balanced transistor Acrian
9 0105-12 12 W, 28 V, 100-500 MHz common emitter transistor GHz Technology
10 0105-12-2 12 W, 28 V, 100-500 MHz, UHF balanced transistor Acrian
11 0105-125 500MHz 28V 100W NPN RF power transistor for wideband VHF-UHF class C applications SGS Thomson Microelectronics
12 0105-50 50 W, 28 V, 100-500 MHz, UHF balanced transistor Acrian
13 0105-50 50 W, 28 V, 100-500 MHz common emitter transistor GHz Technology
14 0105-50-2 50 W, 28 V, 100-500 MHz, UHF balanced transistor Acrian
15 0204-125 125 W, 28 V, 225-400 MHz, balanced transistor Acrian
16 0204-125 125 W, 28 V, 225-400 MHz common emitter transistor GHz Technology
17 0204-125 RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS ST Microelectronics
18 0204-125-2 125 W, 28 V, 225-400 MHz, balanced transistor Acrian
19 0204-125-3 125 W, 28 V, 225-400 MHz, balanced transistor Acrian
20 0204-125-4 125 W, 28 V, 225-400 MHz, balanced transistor Acrian
21 0405-100 Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W SGS Thomson Microelectronics
22 0405-30 Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W SGS Thomson Microelectronics
23 0510-10 20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor Acrian
24 0510-10-2 20 W, 28 V, 500-1000 MHz, UHF emitter silicon power transistor Acrian
25 0510-50A 50 W, 28 V, 500-1000 MHz common emitter transistor GHz Technology
26 0510GN-25-CP GaN Transistors Microsemi
27 0608-020 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz SGS Thomson Microelectronics
28 0608-070 Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics SGS Thomson Microelectronics
29 070 CERAMIC Case dimensions Motorola
30 08090 LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz Infineon


Datasheets found :: 160725
Page: | 1 | 2 | 3 | 4 | 5 |



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