| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3600 |
Silicon signal diode - high current switching |
SESCOSEM |
| 2 |
1N4148W |
SURFACE MOUNT SWITCHING DIODES |
Panjit International Inc |
| 3 |
1N4148WS |
SURFACE MOUNT SWITCHING DIODES |
Panjit International Inc |
| 4 |
1N4150 |
Silicon signal diode - high current switching |
SESCOSEM |
| 5 |
1N4150W |
SURFACE MOUNT SWITCHING DIODES |
Panjit International Inc |
| 6 |
1N4151W |
SURFACE MOUNT SWITCHING DIODES |
Panjit International Inc |
| 7 |
1N4244 |
Silicon signal diode - high current switching |
SESCOSEM |
| 8 |
1N4448W |
SURFACE MOUNT SWITCHING DIODES |
Panjit International Inc |
| 9 |
1N4448WS |
SURFACE MOUNT SWITCHING DIODES |
Panjit International Inc |
| 10 |
2N1038 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 11 |
2N1039 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 12 |
2N1040 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 13 |
2N1041 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 14 |
2N1131 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 15 |
2N1204 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 16 |
2N1204A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 17 |
2N1420 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
| 18 |
2N1494 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 19 |
2N1494A |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 20 |
2N1495 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 21 |
2N1496 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 22 |
2N1991 |
PNP silicon annular transistor for medium-current switching applications |
Motorola |
| 23 |
2N2096 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 24 |
2N2097 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 25 |
2N2099 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 26 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
| 27 |
2N2193AS |
NPN silicon annular transistor for high-current switching and amplifier applications |
Motorola |
| 28 |
2N2195 |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
| 29 |
2N2195A |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
| 30 |
2N2195B |
High-Speed NPN Silicon High-Current Switching Transistor |
ITT Semiconductors |
| | | |
