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Datasheets for NT-M

Datasheets found :: 3004
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1203P60 PWM Current-Mode Controller for Universal Off-Line Supplies Featuring Standby and Short Circuit ON Semiconductor
2 2N3959 NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications Motorola
3 2N3960 NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications Motorola
4 2N6660 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
5 2N6661 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
6 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
7 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
8 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
9 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
10 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
11 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
12 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
13 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
14 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
15 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
16 2N6781 60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
17 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
18 2N6782 100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
19 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
20 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
21 2N7000 N-Channel Enhancement-Mode MOS Transistor Calogic
22 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Supertex Inc
23 2N7000 60 V, 5 ohm, N-channel enhancement-mode D-MOS power FET Topaz Semiconductor
24 2N7000 Enhancement-Mode MOSFET Transistors Vishay
25 2N7002 N-Channel Enhancement-Mode MOS Transistor Calogic
26 2N7002 N-CHANNEL ENHANCEMENT-MODE MOSFET Central Semiconductor
27 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
28 2N7007 N-Channel Enhancement-Mode Vertical DMOS FET Supertex Inc
29 2N7008 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc
30 2N7104 30 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch Topaz Semiconductor


Datasheets found :: 3004
Page: | 1 | 2 | 3 | 4 | 5 |



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