No. |
Part Name |
Description |
Manufacturer |
1 |
2N7002K |
N-channel TrenchMOS intermediate level FET |
Nexperia |
2 |
2N7002K |
N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
3 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
4 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
5 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
6 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
7 |
2SC454 |
Silicon NPN Epitaxial LTP Transistor, intended for use in MW Frequency Converter, 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
8 |
AB-194 |
INTERMODULATION DISTORTION (IMD) |
Burr Brown |
9 |
AFI30 |
Microwave intermediate frequency amplifier |
CCSIT-CE |
10 |
AFI60 |
Microwave intermediate frequency amplifier |
CCSIT-CE |
11 |
AFI90 |
Microwave intermediate frequency amplifier |
CCSIT-CE |
12 |
APPLICATION-NOTE |
3 Tones Intermodulation test (specification TV 05001) |
TRW |
13 |
BF357S |
Epitaxial planar NPN transistor, very low noise, high gain and good intermodulation properties |
SGS-ATES |
14 |
BFQ23 |
Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain |
Philips |
15 |
BFR94 |
NPN resistance-stabilizer transistor in a SOT-48 capstan envelope, very low cross modulation, intermodulation and second harmonic distortion |
Philips |
16 |
BFW92 |
NPN high-frequency transistor, low noise over a wide current range, very high power gain and good intermodulation |
Philips |
17 |
BM3189 |
βM3189 Circuit for intermediate frequency MF, HI FI |
IPRS Baneasa |
18 |
BSP030 |
N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
19 |
BSP100 |
N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
20 |
BSP110 |
N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
21 |
BSP220 |
P-channel vertical D-MOS intermediate level FET |
Nexperia |
22 |
BSP220 |
P-channel vertical D-MOS intermediate level FET |
NXP Semiconductors |
23 |
BSP225 |
P-channel vertical D-MOS intermediate level FET |
Nexperia |
24 |
BSP225 |
P-channel vertical D-MOS intermediate level FET |
NXP Semiconductors |
25 |
BSP230 |
P-channel vertical D-MOS intermediate level FET |
Nexperia |
26 |
BSP230 |
P-channel vertical D-MOS intermediate level FET |
NXP Semiconductors |
27 |
BSP250 |
P-channel vertical D-MOS intermediate level FET |
Nexperia |
28 |
BSP250 |
P-channel vertical D-MOS intermediate level FET |
NXP Semiconductors |
29 |
BSS192 |
P-channel vertical D-MOS intermediate level FET |
NXP Semiconductors |
30 |
BSS87 |
N-channel vertical D-MOS intermediate level FET |
NXP Semiconductors |
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