| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N1185 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 2 |
2N1186 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 3 |
2N1187 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 4 |
2N1188 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 5 |
2N1189 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 6 |
2N1190 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 7 |
2N1191 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 8 |
2N1192 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 9 |
2N1193 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 10 |
2N1194 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 11 |
2N3114 |
NPN silicon transistor designed for high-voltage, low power video amplifier applications |
Motorola |
| 12 |
2N319 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 13 |
2N320 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 14 |
2N321 |
PNP germanium transistor for audio amplifier and low-frequency switching applications |
Motorola |
| 15 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 16 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 17 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 18 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 19 |
2SA1007 |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 20 |
2SA1007A |
Silicon epitaxial transistor built in emitter balast resistors, designed for use in high power high fidelity audio amplifier applications |
NEC |
| 21 |
2SA1316 |
Transistor Silicon PNP Epitaxial Type (PCT process) For Low Noise Audio Amplifier Applications and Recommended for the First Stages of MC Head Amplifiers |
TOSHIBA |
| 22 |
2SA1349 |
TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE/ CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE/ MAIN AMPL |
TOSHIBA |
| 23 |
2SA1483 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed SwitcHing Applications |
TOSHIBA |
| 24 |
2SA1964 |
For audio amplifier output stages/TV velocity modulation (-160V/ -1.5A) |
ROHM |
| 25 |
2SA493-GR |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 26 |
2SA493-Y |
PNP transistor for low noise audio amplifier applications |
TOSHIBA |
| 27 |
2SA493G |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 28 |
2SA494 |
Silicon PNP epitaxial planar transistor for Low Noise Audio Amplifier Applications |
TOSHIBA |
| 29 |
2SA763 |
PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 30 |
2SA941 |
120V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| | | |
