| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 2 |
BQ24381 |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front End Protection IC with LDO Mode, 7.1 OVP |
Texas Instruments |
| 3 |
BQ24381DSGR |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front End Protection IC with LDO Mode, 7.1 OVP 8-WSON -40 to 125 |
Texas Instruments |
| 4 |
BQ24381DSGRG4 |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front End Protection IC with LDO Mode, 7.1 OVP 8-WSON -40 to 125 |
Texas Instruments |
| 5 |
BQ24381DSGT |
Overvoltage/Overcurrent Protection IC and Li+ Charger Front End Protection IC with LDO Mode, 7.1 OVP 8-WSON -40 to 125 |
Texas Instruments |
| 6 |
BZV39-C75 |
Low noise voltage regulator diode, 75V |
SESCOSEM |
| 7 |
BZV39-C7V5 |
Low noise voltage regulator diode, 7.5V |
SESCOSEM |
| 8 |
BZX46-C75 |
Voltage regulator diode, 75V |
SESCOSEM |
| 9 |
BZX46-C7V5 |
Voltage regulator diode, 7.5V |
SESCOSEM |
| 10 |
BZX55-C75 |
Voltage regulator diode, 75V |
SESCOSEM |
| 11 |
BZX55-C7V5 |
Voltage regulator diode, 7.5V |
SESCOSEM |
| 12 |
BZX83-C7V5 |
Voltage regulator diode, 7.5V |
SESCOSEM |
| 13 |
BZX85-C75 |
Voltage regulator diode, 75V |
SESCOSEM |
| 14 |
BZX85-C7V5 |
Voltage regulator diode, 7.5V |
SESCOSEM |
| 15 |
CD1N4148 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 16 |
CT283 |
0.500W General purpose diode, 70.0V Vr, 0.025uA Ir |
Continental Device India Limited |
| 17 |
HMC373LP3 |
GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz |
Hittite Microwave Corporation |
| 18 |
KM416C256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V |
Samsung Electronic |
| 19 |
KM416C256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
| 20 |
KM416C256DLT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability |
Samsung Electronic |
| 21 |
KM416C256DT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V |
Samsung Electronic |
| 22 |
KM416V256DJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V |
Samsung Electronic |
| 23 |
KM416V256DLJ-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 24 |
KM416V256DLT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability |
Samsung Electronic |
| 25 |
KM416V256DT-7 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V |
Samsung Electronic |
| 26 |
MSM514260E-70TS-K |
262,144-Word x 16-Bit DRAM fast page mode, 70ns |
OKI electronic components |
| 27 |
MSM514260ESL-70JS |
262,144-Word x 16-Bit DRAM fast page mode, 70ns |
OKI electronic components |
| 28 |
MSM514260ESL-70TS-K |
262,144-Word x 16-Bit DRAM fast page mode, 70ns |
OKI electronic components |
| 29 |
MZ1000-10 |
1W Miniature plastic encapsulated in DO-41 case Zener Diode, 7.5V |
Motorola |
| 30 |
MZ1000-34 |
1W Miniature plastic encapsulated in DO-41 case Zener Diode, 75V |
Motorola |
| | | |
