| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0603YC103KAT |
9.9-11.2Gb/s Optical Modulator Driver |
TriQuint Semiconductor |
| 2 |
0802YC106KAT |
9.9-11.2Gb/s Optical Modulator Driver |
TriQuint Semiconductor |
| 3 |
1525AJ |
REGULATING PULSE WIDTH MODULATOR |
Microsemi |
| 4 |
1N56AH |
Germanium Point Contact for Ring Modulator |
Hitachi Semiconductor |
| 5 |
1S1314 |
Silicon planar diode, communication and industrial applications, Low-Level Modulation |
TOSHIBA |
| 6 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
| 7 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
| 8 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 9 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 10 |
20M2 |
Ring modulator |
SESCOSEM |
| 11 |
2623CS |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
| 12 |
2623CSA |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
| 13 |
2623N |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
| 14 |
2623Y |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
| 15 |
2625C |
40 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
| 16 |
2962 |
DUAL SOLENOID/MOTOR DRIVER .PULSE-WIDTH MODULATED CURRENT CONTROL |
Allegro MicroSystems |
| 17 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 18 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 19 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 20 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 21 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 22 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 23 |
2SA1859A |
Silicon PNP Epitaxial Planar Transistor(Audio Output Driver and TV Velocity-modulation) |
Sanken |
| 24 |
2SA1964 |
For audio amplifier output stages/TV velocity modulation (-160V/ -1.5A) |
ROHM |
| 25 |
2SC4883 |
Silicon NPN Epitaxial Planar Transistor(Audio Output Driver and TV Velocity-modulation) |
Sanken |
| 26 |
2SC5248 |
Transistor for audio amplifier output stages / TV velocity modulation |
ROHM |
| 27 |
2SK2331 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 28 |
2SK2332 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 29 |
2SK2497 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 30 |
2SK2856 |
N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| | | |
