No. |
Part Name |
Description |
Manufacturer |
1 |
5962-8777401YX |
Military DRWG. of LM109K/883 device |
Seagate Microelectronics |
2 |
AB-191 |
THERE'S A WORLD OF LINE DRIVERS TO CHOOSE FROM |
Burr Brown |
3 |
AD7226TE |
-0.3, +17V; 500mW; LC2MOS quad 8-bit D/A converter. For process contol, automatic test equipment and calibration of large system parameters |
Analog Devices |
4 |
AMD DURON |
AMD Duron Processor Rev. A0: CPUID Reporting of L2 Cache Size |
Advanced Micro Devices |
5 |
AN1049 |
MINIMIZE POWER LOSSES OF LIGHTLY LOADED FLY BACK CONVERTERS WITH THE L5991 PWM CONTROLLERS |
SGS Thomson Microelectronics |
6 |
AN1089 |
CONTROL LOOP MODELING OF L6561-BASED TM PFC |
SGS Thomson Microelectronics |
7 |
AN1223 |
RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY |
SGS Thomson Microelectronics |
8 |
AN578 |
POWER CROSSING BEHAVIOUR OF LINE CAR PROTECTION |
SGS Thomson Microelectronics |
9 |
AND8067 |
NL27WZ04 Dual Gate Inverter Oscillator Increases the Brightness of LEDs While Reducing Power Consumption |
ON Semiconductor |
10 |
APPLICATION NOTE |
Measuring the intermodulation distortion of linear amplifiers |
Motorola |
11 |
APPLICATION NOTE |
Applied circuit of large-power transistors and transistor modules (motor drive circuit) |
TOSHIBA |
12 |
APPLICATION NOTE |
Application of low-saturation voltage transistors, wiper control, flasher, ignitor, electronic fuel injection control |
TOSHIBA |
13 |
APPLICATION-NOTE |
Optimum method of use of low frequency low noise transistors |
NEC |
14 |
APT5010B2 |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
Advanced Power Technology |
15 |
APT5016 |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS |
Advanced Power Technology |
16 |
APT50M65 |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
Advanced Power Technology |
17 |
APT60M75 |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
Advanced Power Technology |
18 |
APT8011 |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. |
Advanced Power Technology |
19 |
AT91SAM7S128 |
Atmels AT91SAM7S128 is a member of a series of low pincount Flash microcontrollers based on the 32-bit ARM RISC processor. ... |
Atmel |
20 |
AT91SAM7S256 |
Atmels AT91SAM7S256 is a member of a series of low pincount Flash microcontrollers based on the 32-bit ARM RISC processor. ... |
Atmel |
21 |
AT91SAM7S32 |
Atmels AT91SAM7S32 is a member of a series of low pincount Flash microcontrollers based on the 32-bit ARM RISC processor. It ... |
Atmel |
22 |
AT91SAM7S64 |
Atmels AT91SAM7S64 is a member of a series of low pincount Flash microcontrollers based on the 32-bit ARM RISC processor. It ... |
Atmel |
23 |
ATU18 |
The ATU18 series of ULCs is well suited for conversion of latest CPLDs and FPGAs. We can support within one ULC from 62 Kbits to 1195 Kbits DPRAM and from 82 Kgates to 1575 Kgates. |
Atmel |
24 |
AWL6152 |
The ANADIGICS AWL6152 WLAN Power Amplifier is an easy to use module that delivers high level of linearity and efficiency for high ... |
Anadigics Inc |
25 |
AWL6153 |
The ANADIGICS AWL6153 WLAN Power Amplifier is an easy to use module that delivers high level of linearity and efficiency for high ... |
Anadigics Inc |
26 |
AY103T |
Germanium surface rectifier of low power |
TUNGSRAM |
27 |
AY104T |
Germanium surface rectifier of low power |
TUNGSRAM |
28 |
AY105T |
Germanium surface rectifier of low power |
TUNGSRAM |
29 |
AY106T |
Germanium surface rectifier of low power |
TUNGSRAM |
30 |
AY107T |
Germanium surface rectifier of low power |
TUNGSRAM |
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