No. |
Part Name |
Description |
Manufacturer |
1 |
ADS1282SKGDA |
High Temperature Ultra High Resolution Delta Sigma ADC with PGA for Seismic and Energy Exploration 0-XCEPT -55 to 210 |
Texas Instruments |
2 |
ADS8881CDRCR |
18-Bit, 1-MSPS, Serial Interface, microPower, True Differential-Input SAR ADC 10-VSON 0 to 70 |
Texas Instruments |
3 |
ADS8881CDRCT |
18-Bit, 1-MSPS, Serial Interface, microPower, True Differential-Input SAR ADC 10-VSON 0 to 70 |
Texas Instruments |
4 |
BQ24040DSQR |
1A Single-Input, Single Cell Li-Ion Battery Charger. Vovp=6.6V | Linear 10-WSON 0 to 125 |
Texas Instruments |
5 |
BQ24040DSQT |
1A Single-Input, Single Cell Li-Ion Battery Charger. Vovp=6.6V | Linear 10-WSON 0 to 125 |
Texas Instruments |
6 |
BQ24085DRCR |
750mA SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC with Thermal Regulation 10-VSON 0 to 125 |
Texas Instruments |
7 |
BQ24085DRCT |
750mA SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC with Thermal Regulation 10-VSON 0 to 125 |
Texas Instruments |
8 |
BQ24085DRCTG4 |
750mA SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC with Thermal Regulation 10-VSON 0 to 125 |
Texas Instruments |
9 |
BQ24086DRCR |
750mA SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC with Thermal Regulation 10-VSON 0 to 125 |
Texas Instruments |
10 |
BQ24086DRCT |
750mA SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC with Thermal Regulation 10-VSON 0 to 125 |
Texas Instruments |
11 |
BQ24087DRCR |
750mA SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC with Thermal Regulation 10-VSON 0 to 125 |
Texas Instruments |
12 |
BQ24087DRCT |
750mA SINGLE-CHIP Li-Ion/Li-Pol CHARGE MANAGEMENT IC with Thermal Regulation 10-VSON 0 to 125 |
Texas Instruments |
13 |
BQ24088DRCR |
750 mA Single Chip Li-Ion/Li-Pol Charge Management IC with Thermal Regulation 10-VSON 0 to 125 |
Texas Instruments |
14 |
BQ24088DRCT |
750 mA Single Chip Li-Ion/Li-Pol Charge Management IC with Thermal Regulation 10-VSON 0 to 125 |
Texas Instruments |
15 |
BQ24300DSGR |
Charger front end protection IC with 30V max Vin and 5.5V LDO output 8-WSON 0 to 125 |
Texas Instruments |
16 |
BQ24300DSGT |
Charger front end protection IC with 30V max Vin and 5.5V LDO output 8-WSON 0 to 125 |
Texas Instruments |
17 |
BQ24305DSGR |
Overvoltage and Overcurrent Protection IC and Li+ Charger Front End Protection IC 8-WSON 0 to 125 |
Texas Instruments |
18 |
BQ24305DSGT |
Overvoltage and Overcurrent Protection IC and Li+ Charger Front End Protection IC 8-WSON 0 to 125 |
Texas Instruments |
19 |
BQ24308DSGR |
Overvoltage and Overcurrent Protection IC 8-WSON 0 to 125 |
Texas Instruments |
20 |
BQ24308DSGT |
Overvoltage and Overcurrent Protection IC 8-WSON 0 to 125 |
Texas Instruments |
21 |
CSD87333Q3D |
High Duty Cycle Synchronous Buck NexFET™ 3x3 Power Block 8-VSON 0 to 0 |
Texas Instruments |
22 |
CSD87333Q3DT |
High Duty Cycle Synchronous Buck NexFET™ 3x3 Power Block 8-VSON 0 to 0 |
Texas Instruments |
23 |
DDRSDRAM |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
24 |
DSP56651DS |
DSP56651/D Integrated Cellular Baseband Processor Development IC Revision 0 |
Motorola |
25 |
HUF75333G3 |
Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C |
Fairchild Semiconductor |
26 |
ISL21032BPH306 |
Precision 0.600V Low Voltage FGA� References |
Intersil |
27 |
ISL21032CPH306 |
Precision 0.600V Low Voltage FGA� References |
Intersil |
28 |
ISL21032DPH306 |
Precision 0.600V Low Voltage FGA� References |
Intersil |
29 |
KM416L8031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. |
Samsung Electronic |
30 |
KM416L8031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. |
Samsung Electronic |
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