No. |
Part Name |
Description |
Manufacturer |
1 |
2N6274 |
50A silicon 250W high-power, NPN transistor |
Motorola |
2 |
2N6275 |
50A silicon 250W high-power, NPN transistor |
Motorola |
3 |
2N6276 |
50A silicon 250W high-power, NPN transistor |
Motorola |
4 |
2N6277 |
50A silicon 250W high-power, NPN transistor |
Motorola |
5 |
BM60051FV-C |
1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage |
ROHM |
6 |
BM60051FV-CE2 |
1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage |
ROHM |
7 |
BM60055FV-C |
1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage |
ROHM |
8 |
BM60055FV-CE2 |
1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage |
ROHM |
9 |
DS1971-004-550/1+ |
iButton 256-Bit EEPROM |
MAXIM - Dallas Semiconductor |
10 |
DS1971-F3# |
iButton 256-Bit EEPROM |
MAXIM - Dallas Semiconductor |
11 |
DS1971-F3+ |
iButton 256-Bit EEPROM |
MAXIM - Dallas Semiconductor |
12 |
DS1971-F5# |
iButton 256-Bit EEPROM |
MAXIM - Dallas Semiconductor |
13 |
DS1971-F5+ |
iButton 256-Bit EEPROM |
MAXIM - Dallas Semiconductor |
14 |
DS1971A-F3+ |
iButton 256-Bit EEPROM |
MAXIM - Dallas Semiconductor |
15 |
DS1971A-F3+W |
iButton 256-Bit EEPROM |
MAXIM - Dallas Semiconductor |
16 |
LM49153TME/NOPB |
Mono Audio Subsys w/ class G Headphone Amp Class D Speaker Amp Noise Gate & Speaker Protection 25-DSBGA -40 to 85 |
Texas Instruments |
17 |
LM49153TMX/NOPB |
Mono Audio Subsys w/ class G Headphone Amp Class D Speaker Amp Noise Gate & Speaker Protection 25-DSBGA -40 to 85 |
Texas Instruments |
18 |
LM8330 |
I2C-Compatible Keypad Controller with GPIO, PWM, and IEC61000 ESD Protection 25-DSBGA |
Texas Instruments |
19 |
LM8330TME/NOPB |
I2C-Compatible Keypad Controller with GPIO, PWM, and IEC61000 ESD Protection 25-DSBGA |
Texas Instruments |
20 |
LM8330TMX/NOPB |
I2C-Compatible Keypad Controller with GPIO, PWM, and IEC61000 ESD Protection 25-DSBGA |
Texas Instruments |
21 |
M28F201-120K1 |
Memory configuration 256Kx8 Memory type Flash Memory size 2 M-bit 2Mb (256K8) FLASH memory - 120ns Access (PLCC) |
SGS Thomson Microelectronics |
22 |
M28F201-120N1 |
Memory configuration 256Kx8 Memory type Flash Memory size 2 M-bit 2Mb (256K8) FLASH memory - 120ns Access (TSOP) |
SGS Thomson Microelectronics |
23 |
M28F201-70K1 |
Memory configuration 256Kx8 Memory type Flash Memory size 2 M-bit 2Mb (256K8) FLASH memory - 70ns Access (PLCC) |
SGS Thomson Microelectronics |
24 |
M28F201-90K1 |
Memory configuration 256Kx8 Memory type Flash Memory size 2 M-bit 2Mb (256K8) FLASH memory - 90ns Access (PLCC) |
SGS Thomson Microelectronics |
25 |
M368L1624DTM |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC |
Samsung Electronic |
26 |
M368L1624DTM-CCC |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC |
Samsung Electronic |
27 |
M368L1624DTM-CCC/C4 |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC |
Samsung Electronic |
28 |
M368L1624DTM-LCC |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC |
Samsung Electronic |
29 |
M368L1624DTM-LCC/C4 |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC |
Samsung Electronic |
30 |
M368L1624FTM |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC |
Sanken |
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