No. |
Part Name |
Description |
Manufacturer |
1 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
2 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
3 |
1421 |
Bulk Metal Foil Technology, 12 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
4 |
1422 |
Bulk Metal Foil Technology, 16 Pin Transistor Outline Hermetic Resistor Network, Suitable for Ladder Networks, Ideal when Power Dissipation is a Consideration |
Vishay |
5 |
2041-6201-00 |
Unmatched tees non isolated |
MA-Com |
6 |
2041-6202-00 |
Unmatched tees non isolated |
MA-Com |
7 |
2041-6203-00 |
Unmatched tees non isolated |
MA-Com |
8 |
2041-6204-00 |
Unmatched tees non isolated |
MA-Com |
9 |
22C040 |
32 to 40 SEC INSTANT VOICE ROM |
Integrated Silicon Solution Inc |
10 |
24C016 |
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM |
Integrated Silicon Solution Inc |
11 |
2502-2 |
MOUNTING BRACKET KIT INSTALLATION INSTRUCTIONS |
etc |
12 |
277 |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
13 |
277A |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
14 |
277J |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
15 |
277K |
Precision Isolation Amplifier High CMV/CMR,+-5V Floating |
Intronics |
16 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
17 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
18 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
19 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
20 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
21 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
22 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
23 |
2N4214 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
24 |
2N4215 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
25 |
2N4216 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
26 |
2N5431 |
Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits |
Motorola |
27 |
311M09 |
COMMISSION INTERNATIONALE DE KARTING - FIA |
etc |
28 |
363D |
LM363 Precision Instrumentation Amplifier |
National Semiconductor |
29 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
30 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
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