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Datasheets found :: 6028
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No. Part Name Description Manufacturer
1 1416-1 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
2 1416-3 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
3 22C040 32 to 40 SEC INSTANT VOICE ROM Integrated Silicon Solution Inc
4 24C016 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM Integrated Silicon Solution Inc
5 2502-2 MOUNTING BRACKET KIT INSTALLATION INSTRUCTIONS etc
6 2N2322 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
7 2N2323 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
8 2N2324 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
9 2N2325 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
10 2N2326 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
11 2N4212 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
12 2N4213 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
13 2N4214 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
14 2N4215 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
15 2N4216 PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits Motorola
16 2N5431 Silicon annular unijunction transistor characterized primarily for low interbase-voltage operation in sensing, pulse triggering, and timing circuits Motorola
17 311M09 COMMISSION INTERNATIONALE DE KARTING - FIA etc
18 363D LM363 Precision Instrumentation Amplifier National Semiconductor
19 3N142 SILICON INSULATED GATE FIELD EFFECT TRANSISTOR General Electric Solid State
20 3N153 SILICON INSULATED GATE FIELD EFFECT TRANSISTOR General Electric Solid State
21 40080 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
22 40081 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
23 40082 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
24 40446 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
25 40581 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
26 40582 Silicon NPN Planar Transistor for class C Operation in 27MHz CB Circuits RCA Solid State
27 41C16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Integrated Silicon Solution Inc
28 42S16400A 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
29 42S16800A 16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution Inc
30 42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc


Datasheets found :: 6028
Page: | 1 | 2 | 3 | 4 | 5 |



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