| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4933GP |
Glass Passivated Junction, Fast Switching Rectifier, Forward Current 1.0A |
Vishay |
| 2 |
1N4934GP |
Glass Passivated Junction, Fast Switching Rectifier, Forward Current 1.0A |
Vishay |
| 3 |
1N4935GP |
Glass Passivated Junction, Fast Switching Rectifier, Forward Current 1.0A |
Vishay |
| 4 |
1N4936GP |
Glass Passivated Junction, Fast Switching Rectifier, Forward Current 1.0A |
Vishay |
| 5 |
1N4937GP |
Glass Passivated Junction, Fast Switching Rectifier, Forward Current 1.0A |
Vishay |
| 6 |
1N542 |
Tungsten point contact germanium diode - detection, sold by matched pairs (2x1N542) |
SESCOSEM |
| 7 |
1S1579 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
| 8 |
1S1580 |
Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad |
TOSHIBA |
| 9 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 10 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 11 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 12 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 13 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 14 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 15 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 16 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 17 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 18 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 19 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 20 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 21 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 22 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 23 |
2114BF |
Hybrid Circuit SWITCH used for high level multiplexing, A/D conversion, telemetry, and chopper applications |
Amelco Semiconductor |
| 24 |
289 |
Precision, Wide Bandwidth, Synchronized Isolation Amplifier |
Intronics |
| 25 |
289J |
Precision, Wide Bandwidth, Synchronized Isolation Amplifier |
Intronics |
| 26 |
289K |
Precision, Wide Bandwidth, Synchronized Isolation Amplifier |
Intronics |
| 27 |
289L |
Precision, Wide Bandwidth, Synchronized Isolation Amplifier |
Intronics |
| 28 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 29 |
2N3055 |
NPN silicon, epibase, mesa transistor |
Mikroelektronikai Vallalat |
| 30 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
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