| No. |
Part Name |
Description |
Manufacturer |
| 1 |
3N140 |
N-Channel dual-gate silicon-nitride passivated MOS field-effect transistor |
Motorola |
| 2 |
MFE130 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOSFET |
Motorola |
| 3 |
MFE131 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOSFET |
Motorola |
| 4 |
MFE132 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOSFET |
Motorola |
| 5 |
MFE3006 |
N-channel dual-gate silicon-nitride passivated MOS field-effect transistor, depletion mode (Type B) |
Motorola |
| 6 |
MFE3007 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOS Field-Effect Transistor Type B, designed for VHF amplifiers and mixer applications |
Motorola |
| 7 |
MFE3008 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOS FET |
Motorola |
| 8 |
MFE590 |
N-Channel Dual-Gate Silicon-Nitride Passivated DMOS FET |
Motorola |
| 9 |
MFE591 |
N-Channel Dual-Gate Silicon-Nitride Passivated DMOS FET |
Motorola |
| 10 |
MPF130 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOSFET |
Motorola |
| 11 |
MPF131 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOSFET |
Motorola |
| 12 |
MPF132 |
N-Channel Dual-Gate Silicon-Nitride Passivated MOSFET |
Motorola |
| 13 |
TID29A |
10x dual silicon epitaxial planar diode group, the connecting wires are gold-plated and made of an iron-nickel-cobalt alloy |
Texas Instruments |
| 14 |
TID30A |
10x dual silicon epitaxial planar diode group, the connecting wires are gold-plated and made of an iron-nickel-cobalt alloy |
Texas Instruments |
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