| No. |
Part Name |
Description |
Manufacturer |
| 1 |
12CWQ10G |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 2 |
12CWQ10GPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 3 |
12CWQ10GTR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 4 |
12CWQ10GTRL |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 5 |
12CWQ10GTRLPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 6 |
12CWQ10GTRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 7 |
12CWQ10GTRR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 8 |
12CWQ10GTRRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 9 |
24LC22A |
The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o |
Microchip |
| 10 |
2N178 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 11 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 12 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 13 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 14 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 15 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 16 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 17 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 18 |
2N554 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 19 |
2N555 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
| 20 |
2SC3381 |
NPN EPITAXIAL TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS RECOMMENDED FOR CASCODE/ CURRENT MIRROR CIRCUIT OF THE FIRST STAGE OF PRE/ MAIN AMPLIFIERS) |
TOSHIBA |
| 21 |
7343-2USRC |
The series is specially designed for applications requiring higher brightness. |
Everlight Electronics |
| 22 |
7343-S1060 |
The series is specially designed for applications requiring higher brightness. |
Everlight Electronics |
| 23 |
ADA10000 |
The ADA10000 is a monolithic IC intended for use in applications requiring high linearity such as: Cellular Telephone Base Station ... |
Anadigics Inc |
| 24 |
ADA10001 |
The ADA10001 is a monolithic IC intended for use in applications requiring high linearity such as: Cellular Telephone Base Station ... |
Anadigics Inc |
| 25 |
ADC10065CIMTX |
V(cc): 3.9V; 10-bit, 65 MSPS, 3V; A/D converter. For ultrasound and imaging, instrumentation, cellular based stations/communications receivers, sonar/radar. xDSL, wireless local loops, etc. |
National Semiconductor |
| 26 |
ADC12040EVAL |
V(cc): 6.5V; 12-bit, 40 MSPS, 340 mW; A/D converter with internal sample-and-hold. For ultrasound and imaging, instrumentation, sonar/radar, cellular base stations/communications receivers, sDSL, etc. |
National Semiconductor |
| 27 |
AGB3300 |
The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ... |
Anadigics Inc |
| 28 |
AGB3301 |
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ... |
Anadigics Inc |
| 29 |
AGB3302 |
The AGB3302 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
| 30 |
AGB3303 |
The AGB3303 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
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