| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0603YC103KAT |
9.9-11.2Gb/s Optical Modulator Driver |
TriQuint Semiconductor |
| 2 |
0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 3 |
0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 4 |
0802YC106KAT |
9.9-11.2Gb/s Optical Modulator Driver |
TriQuint Semiconductor |
| 5 |
103-1 |
Application Note - Flash Analog to Digital Converters Optimizing Performance |
Comlinear Corporation |
| 6 |
10785A |
10785A Optics Height Adjuster and Post |
Agilent (Hewlett-Packard) |
| 7 |
13LED20M-ST |
Typical optical and electrical characteristics. |
Anadigics Inc |
| 8 |
13LED20M-TO |
Typical optical and electrical characteristics. |
Anadigics Inc |
| 9 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 10 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 11 |
1474 |
Class C 28V 48W common emitter transistor optimized for pulsed applications in the 400-500MHz |
SGS Thomson Microelectronics |
| 12 |
15LED20M-ST |
Typical optical and electrical characteristics. |
Anadigics Inc |
| 13 |
15LED20M-TO |
Typical optical and electrical characteristics. |
Anadigics Inc |
| 14 |
163CNQ060 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 15 |
163CNQ080 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 16 |
163CNQ090 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 17 |
163CNQ100 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
| 18 |
1724 |
Optical Amplifier Platform,1724-Type Eribium-Doped Fiber Amplifier(W Series)�� |
Agere Systems |
| 19 |
1802 |
Thyratrons |
PerkinElmer Optoelectronics |
| 20 |
1N100 |
Optimized for Radio Frequency Response |
Microsemi |
| 21 |
1N6264 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 22 |
1N6265 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 23 |
1N6266 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 24 |
24C01SC |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC01SC Instead The 24C01SC is a 1K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific ap |
Microchip |
| 25 |
24C02SC |
The 24C02SC is a 2K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific applications. The 24C02SC is organized as a single block of 256 x 8-bit memory with an I2C™ compatible 2-wire seria |
Microchip |
| 26 |
2623CS |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
| 27 |
2623CSA |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
| 28 |
2623N |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
| 29 |
2623Y |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
| 30 |
2625C |
40 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
| | | |
