No. |
Part Name |
Description |
Manufacturer |
1 |
0603YC103KAT |
9.9-11.2Gb/s Optical Modulator Driver |
TriQuint Semiconductor |
2 |
0802YC106KAT |
9.9-11.2Gb/s Optical Modulator Driver |
TriQuint Semiconductor |
3 |
10785A |
10785A Optics Height Adjuster and Post |
Agilent (Hewlett-Packard) |
4 |
13LED20M-ST |
Typical optical and electrical characteristics. |
Anadigics Inc |
5 |
13LED20M-TO |
Typical optical and electrical characteristics. |
Anadigics Inc |
6 |
15LED20M-ST |
Typical optical and electrical characteristics. |
Anadigics Inc |
7 |
15LED20M-TO |
Typical optical and electrical characteristics. |
Anadigics Inc |
8 |
163CNQ060 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
9 |
163CNQ080 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
10 |
163CNQ090 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
11 |
163CNQ100 |
The 163CNQ isolated center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature |
International Rectifier |
12 |
1724 |
Optical Amplifier Platform,1724-Type Eribium-Doped Fiber Amplifier(W Series)�� |
Agere Systems |
13 |
1N100 |
Optimized for Radio Frequency Response |
Microsemi |
14 |
24C01SC |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please Consider 24LC01SC Instead The 24C01SC is a 1K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific ap |
Microchip |
15 |
24C02SC |
The 24C02SC is a 2K bit Electrically Erasable PROM with bondpad positions optimized for smart card specific applications. The 24C02SC is organized as a single block of 256 x 8-bit memory with an I2C compatible 2-wire seria |
Microchip |
16 |
2623CS |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
17 |
2623CSA |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
18 |
2623N |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
19 |
2623Y |
10 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
20 |
2625C |
40 Gbits/s Lithium Niobate Electro-Optic Modulator |
Agere Systems |
21 |
2910 |
10 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
22 |
2920 |
20 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
23 |
293D |
Solid Tantalum Chip Capacitors, Molded, Standard EIA Case Sizings and Ratings, TANTAMOUNT®, Commercial, Surface Mount, Automatic Pick & Place Compatible, Optical Character Recognition Qualified |
Vishay |
24 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
25 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
26 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
27 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
28 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
29 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
30 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
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