| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1002M |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 2 |
1002MP |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 3 |
1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
| 4 |
12CWQ10G |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 5 |
12CWQ10GPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 6 |
12CWQ10GTR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 7 |
12CWQ10GTRL |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 8 |
12CWQ10GTRLPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 9 |
12CWQ10GTRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 10 |
12CWQ10GTRR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 11 |
12CWQ10GTRRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 12 |
1815 |
Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications) |
TOSHIBA |
| 13 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 14 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 15 |
1N34A |
Germanium Point Contact for AM detector |
Hitachi Semiconductor |
| 16 |
1N34AH |
Germanium Point Contact for AM detector or logical circuit |
Hitachi Semiconductor |
| 17 |
1N4001A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 18 |
1N4002A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 19 |
1N4003A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 20 |
1N4004A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 21 |
1N4005A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 22 |
1N4006A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 23 |
1N4007A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 24 |
1N5711WS-7 |
70V; 15mA surface mount schottky barrier diode. Ideally suited for automatic insertion |
Diodes |
| 25 |
1S1553 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 26 |
1S1554 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 27 |
1S1555 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 28 |
1S2091 |
Silicon epitaxial planar diode, Phase Detector Application for color TV |
TOSHIBA |
| 29 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 30 |
1SS358 |
VHF, UHF Detector and Mixer Applications Schottky Barrier Diode |
SANYO |
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