| No. |
Part Name |
Description |
Manufacturer |
| 1 |
12CWQ10G |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 2 |
12CWQ10GPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 3 |
12CWQ10GTR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 4 |
12CWQ10GTRL |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 5 |
12CWQ10GTRLPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 6 |
12CWQ10GTRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 7 |
12CWQ10GTRR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 8 |
12CWQ10GTRRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 9 |
1S2091 |
Silicon epitaxial planar diode, Phase Detector Application for color TV |
TOSHIBA |
| 10 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 11 |
1SV128 |
DIODE VHF~UHF BAND RF ATTENUATOR APPLICATIONS |
TOSHIBA |
| 12 |
1SV237 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 13 |
1SV252 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 14 |
1SV271 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 15 |
1SV298 |
pi Type Attenuator Applications |
SANYO |
| 16 |
1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 17 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 18 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 19 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 20 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 21 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 22 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 23 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 24 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 25 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
| 26 |
2N3544 |
NPN silicon transistor for VHF and UHF oscillator applications |
Motorola |
| 27 |
2N3733 |
NPN silicon transistor designed for amplifier, frequency multiplier and oscillator applications |
Motorola |
| 28 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 29 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 30 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
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