| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1002M |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 2 |
1002MP |
Low level Class C transistor designed for avionics driver applications |
SGS Thomson Microelectronics |
| 3 |
1011-060 |
High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
SGS Thomson Microelectronics |
| 4 |
1011-225 |
High power Class C transistor designed for L-Band Avionics applications |
SGS Thomson Microelectronics |
| 5 |
1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
| 6 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 7 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 8 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 9 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 10 |
1517-035 |
High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems |
SGS Thomson Microelectronics |
| 11 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 12 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 13 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
| 14 |
1536-3 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 15 |
1536-8 |
NPN power RF transistor designed for high power pulsed IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
| 16 |
1616-050 |
High power Class C, CW transistor designed for 1.6GHz satellite communications applications including GPS and INMARSAT |
SGS Thomson Microelectronics |
| 17 |
1893 |
1.65GHz 10W 28V NPN Silicon RF Transistor designed for MARISAT Applications |
SGS Thomson Microelectronics |
| 18 |
1N5150A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 19 |
1N5151 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 20 |
1N5152 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 21 |
1N5152A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 22 |
1N5153 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 23 |
1N5153A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 24 |
1N5155A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 25 |
1S1553 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 26 |
1S1554 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 27 |
1S1555 |
Silicon epitaxial planar diode, general purpose Application for Detector and Rectifier |
TOSHIBA |
| 28 |
1SS106 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 29 |
1SS198 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 30 |
1SS286 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| | | |
