No. |
Part Name |
Description |
Manufacturer |
1 |
1417-25 |
1.4-1.7GHz 25W 24V NPN RF transistor for microwave applications |
SGS Thomson Microelectronics |
2 |
1720-10 |
1.7-2.0GHz 10W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
3 |
1720-13 |
1.7-2.0GHz 13W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
4 |
1720-20 |
1.7-2.0GHz 20W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
5 |
1720-25 |
1.7-2.0GHz 25W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
6 |
1720-3 |
1.7-2.0GHz 3W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
7 |
1720-6 |
1.7-2.0GHz 6W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
8 |
1922-18 |
1.9-2.2GHz 18W 24V NPN transistor for microwave telecommunication applications |
SGS Thomson Microelectronics |
9 |
2561 |
CT2561 Bus Controller, Remote Terminal and BUS Monitor FOR MIL-STD-1553B |
Aeroflex Circuit Technology |
10 |
2N1120 |
PNP Germanium power transistor for military and industrial power applications |
Motorola |
11 |
2N297A |
PNP germanium power transistor for military and industrial power switching and amplifier applications |
Motorola |
12 |
2N5160 |
PNP silicon RF power transistor for military and industrial equipment |
Motorola |
13 |
2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
14 |
2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
15 |
2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
16 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
17 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
18 |
2SC5369 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
NEC |
19 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
20 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
21 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
22 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
23 |
40821 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor for Mixer |
RCA Solid State |
24 |
BB1 |
COMPOUND TRANSISTOR on-chip resistor NPN silicon epitaxial transistor For mid-speed switching |
NEC |
25 |
BD39012EFV-C |
System Regulator for microcontroller for automotive |
ROHM |
26 |
BD39012EFV-CE2 |
System Regulator for microcontroller for automotive |
ROHM |
27 |
BF506A |
Epitaxial planar PNP transistor, suggested as VHF oscillator for mixer using MOS-FET devices |
SGS-ATES |
28 |
BF606B |
Epitaxial planar PNP transistor, intended for application as VHF oscillator for mixer |
SGS-ATES |
29 |
C1100H |
Uncapsulated Chip Transistor for Microcircuit Assemblies |
Newmarket Transistors NKT |
30 |
C1100L |
Uncapsulated Chip Transistor for Microcircuit Assemblies |
Newmarket Transistors NKT |
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