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Datasheets for OR POWER

Datasheets found :: 685
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1DI200Z-100 Power transistor module for power switching, AC and DC motor controls COLLMER SEMICONDUCTOR INC
2 1DI200Z-120 Power transistor module for power switching, AC and DC motor controls COLLMER SEMICONDUCTOR INC
3 1DI300Z-100 Power transistor module for power switching, AC and DC motor controls COLLMER SEMICONDUCTOR INC
4 1DI300Z-120 Power transistor module for power switching, AC and DC motor controls COLLMER SEMICONDUCTOR INC
5 1S310 Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
6 1S310H Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
7 1S311 Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
8 1S311H Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
9 1S312 Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
10 1S312H Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
11 1S313 Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
12 1S313H Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
13 1S314 Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
14 1S314H Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
15 1S315 Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
16 1S315H Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source Hitachi Semiconductor
17 2B940A Silicon PNP epitaxial planar type(For power amplification) Panasonic
18 2DI200D-100 Power transistor module for power switching, AC and DC motor control applications COLLMER SEMICONDUCTOR INC
19 2DI30Z-100 Power transistor module for power switching, AC and DC motor control applications COLLMER SEMICONDUCTOR INC
20 2DI75Z-100 Power transistor module for power switching, Ac and DC motor control applications COLLMER SEMICONDUCTOR INC
21 2DI75Z-120 Power transistor module for power switching, Ac and DC motor control applications COLLMER SEMICONDUCTOR INC
22 2N2947 NPN silicon annular transistor for power amplifier applications to 100MHz Motorola
23 2N2948 NPN silicon annular transistor for power amplifier applications to 100MHz Motorola
24 2N2949 NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case Motorola
25 2N2950 NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case Motorola
26 2N3298 NPN silicon transistor for power oscillator applications to 150 MHz Motorola
27 2N3664 NPN silicon transistor for power amplifier and driver applications to 500MHz Motorola
28 2N4427 VHF OSCILLATOR POWER AMPLIFIER ST Microelectronics
29 2SA1094 Silicon PNP epitaxial transistor, for power amplifier applications TOSHIBA
30 2SA1306B 1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications TOSHIBA


Datasheets found :: 685
Page: | 1 | 2 | 3 | 4 | 5 |



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