No. |
Part Name |
Description |
Manufacturer |
1 |
2SC101 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
2 |
2SC102 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
3 |
2SC106 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
4 |
2SC107 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
5 |
2SC1590 |
Silicon NPN Transistor RF Power Output |
Unknow |
6 |
2SC161 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
7 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
8 |
2SC21 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
9 |
2SC481 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
10 |
2SC502 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
11 |
2SC520A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
12 |
2SC521A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
13 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
14 |
40468A |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF Amplifier and Mixer Applications in FM and AM/FM receivers |
RCA Solid State |
15 |
40559A |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF Amplifier and Mixer Applications in FM and AM/FM receivers |
RCA Solid State |
16 |
40820 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor for RF amplifier |
RCA Solid State |
17 |
40822 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor, for RF amplifiers |
RCA Solid State |
18 |
41044 |
0.4W 4.36GHz Oscillator RF Silicon NPN Transistor |
RCA Solid State |
19 |
5962-9855001QXA |
PLLatinum 1.2 GHz Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
20 |
5962-9855002QXA |
PLLatinum 2.5 GHz Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
21 |
5962-9855003QXA |
PLLatinum Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
22 |
AAT1171 |
600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch |
Skyworks Solutions |
23 |
AAT1171IUP-1-T1 |
600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch |
Skyworks Solutions |
24 |
AAT1171IWP-1-T1 |
600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch |
Skyworks Solutions |
25 |
AAT1171IWP-4-T1 |
600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch |
Skyworks Solutions |
26 |
AAT1171IWP-5-T1 |
600mA Voltage-Scaling Step-Down Converter for RF Power Amplifiers with Bypass Switch |
Skyworks Solutions |
27 |
AB-189 |
MACROMODELS FOR RF OP AMPS ARE A POWERFUL DESIGN TOOL |
Burr Brown |
28 |
AF379 |
PNP Germanium RF Transistor for RF tuner stages up to 900MHz |
Siemens |
29 |
AFY15 |
Germanium PNP transistor for RF and IF stages up to 10MHz |
AEG-TELEFUNKEN |
30 |
BAR64 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
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