| No. |
Part Name |
Description |
Manufacturer |
| 1 |
32N50Q |
HiPerFET Power MOSFETs ISOPLUS247 |
IXYS Corporation |
| 2 |
AN801 |
Designing with LITTLE FOOT® Power MOSFETs in Surface-Mount (SO-8) Packages |
Vishay |
| 3 |
AR-141 |
Application Note - Applying Power MOSFETs in Class D/E RF Power Amplifier Design |
Motorola |
| 4 |
HIP9021 |
Portable Battery Drive/Torque Controller for N-Channel MOSFETs in Motor Control Systems |
Intersil |
| 5 |
HIP9021IB |
Portable Battery Drive/Torque Controller for N-Channel MOSFETs in Motor Control Systems |
Intersil |
| 6 |
IXFR10N100F |
HiPerFET Power MOSFETs ISOPLUS247 |
IXYS Corporation |
| 7 |
IXFR120N20 |
HiPerFETTM Power MOSFETs ISOPLUS247 |
IXYS Corporation |
| 8 |
IXFR12N100F |
HiPerFET Power MOSFETs ISOPLUS247 |
IXYS Corporation |
| 9 |
IXFR30N50 |
HiPerFET Power MOSFETs ISOPLUS247 |
IXYS Corporation |
| 10 |
IXFR30N50Q |
HiPerFET Power MOSFETs ISOPLUS247 |
IXYS Corporation |
| 11 |
IXFR44N60 |
HiPerFETTM Power MOSFETs ISOPLUS247 |
IXYS Corporation |
| 12 |
OM6056 |
POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE |
Omnirel |
| 13 |
OM6060SB |
POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE |
Omnirel |
| 14 |
OM6061SB |
POWER MOSFETS IN A HERMETIC ISOLATED POWER BLOCK PACKAGE |
Omnirel |
| 15 |
OM60N10S |
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE |
Omnirel |
| 16 |
STB28N60M2 |
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh II Plus(TM) low Qg Power MOSFETs in D2PAK package |
ST Microelectronics |
| 17 |
STB33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in D2PAK package |
ST Microelectronics |
| 18 |
STF28N60M2 |
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220FP package |
ST Microelectronics |
| 19 |
STF33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220FP package |
ST Microelectronics |
| 20 |
STFI28N60M2 |
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh II Plus(TM) low Qg Power MOSFETs in I2PAKFP package |
ST Microelectronics |
| 21 |
STI33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in I2PAK package |
ST Microelectronics |
| 22 |
STP28N60M2 |
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220 package |
ST Microelectronics |
| 23 |
STP33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220 package |
ST Microelectronics |
| 24 |
STP5N105K5 |
N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFETs in TO-220 package |
ST Microelectronics |
| 25 |
STW28N60M2 |
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-247 package |
ST Microelectronics |
| 26 |
STW33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-247 package |
ST Microelectronics |
| 27 |
TLE 6280GP |
Driver IC for 6 MOSFETs in Bridge configuration |
Infineon |
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