| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N5913 |
Silicon NPN Overalay RF Transistor, 12.5 Volt, for class-C VHF/UHF amplifiers |
RCA Solid State |
| 2 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
| 3 |
CGY96 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
Siemens |
| 4 |
IR3513M |
POL Control IC provides overall control of a scalable number of phases along with an internal gate driver current sense/sharing and PWM. |
International Rectifier |
| 5 |
IR3513MPBF |
POL Control IC provides overall control of a scalable number of phases along with an internal gate driver current sense/sharing and PWM. |
International Rectifier |
| 6 |
IR3513ZM |
POL Control IC provides overall control of a scalable number of phases along with an internal gate driver current sense/sharing and PWM. |
International Rectifier |
| 7 |
IR3513ZMTRPBF |
POL Control IC provides overall control of a scalable number of phases along with an internal gate driver current sense/sharing and PWM. |
International Rectifier |
| 8 |
MCP73826 |
The MCP73826 is a battery charger controller for single cell Li-Ion batteries. Using an external PMOS transistor, safe and fast charging of a single Li-Ion cell is accomplished. An overall system accuracy of 1% ensures that the cell capaci |
Microchip |
| 9 |
Q62702G63 |
GaAs MMIC (Power amplifier for GSM class 4 phones 3.2 W 35dBm output power at 3.5 V Overall power added efficiency 50%) |
Siemens |
| 10 |
TA7367 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
| | | |
