| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1014-12 |
Pulsed Power L-Band (Si) |
Microsemi |
| 2 |
1014-2 |
Pulsed Power L-Band (Si) |
Microsemi |
| 3 |
1014-6A |
Pulsed Power L-Band (Si) |
Microsemi |
| 4 |
1214-110M |
Pulsed Power L-Band (Si) |
Microsemi |
| 5 |
1214-110V |
Pulsed Power L-Band (Si) |
Microsemi |
| 6 |
1214-150L |
Pulsed Power L-Band (Si) |
Microsemi |
| 7 |
1214-220M |
Pulsed Power L-Band (Si) |
Microsemi |
| 8 |
1214-30 |
Pulsed Power L-Band (Si) |
Microsemi |
| 9 |
1214-300 |
Pulsed Power L-Band (Si) |
Microsemi |
| 10 |
1214-300M |
Pulsed Power L-Band (Si) |
Microsemi |
| 11 |
1214-300V |
Pulsed Power L-Band (Si) |
Microsemi |
| 12 |
1214-32L |
Pulsed Power L-Band (Si) |
Microsemi |
| 13 |
1214-370M |
Pulsed Power L-Band (Si) |
Microsemi |
| 14 |
1214-370V |
Pulsed Power L-Band (Si) |
Microsemi |
| 15 |
1214-55 |
Pulsed Power L-Band (Si) |
Microsemi |
| 16 |
1214-550P |
Pulsed Power L-Band (Si) |
Microsemi |
| 17 |
1214-700P |
Pulsed Power L-Band (Si) |
Microsemi |
| 18 |
1214-700P1 |
Pulsed Power L-Band (Si) |
Microsemi |
| 19 |
1214-800P |
Pulsed Power L-Band (Si) |
Microsemi |
| 20 |
1617-35 |
Pulsed Power L-Band (Si) |
Microsemi |
| 21 |
16DL2DZ47A |
HIGH EFFICIENCY DIODE STACK (SWITCHING TYPE POWER LUPPLY APPLICATION) |
TOSHIBA |
| 22 |
2-2NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 23 |
2-3NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 24 |
2-4NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 25 |
2-5NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 26 |
2-6NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 27 |
2-7NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 28 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 29 |
2N6098 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 30 |
2N6099 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| | | |
